Title of article
Nanoscale studies of defect-mediated polarization switching dynamics in ferroelectric thin film capacitors
Author/Authors
Yang، نويسنده , , Sang Mo and Yoon، نويسنده , , Jong-Gul and Noh، نويسنده , , Tae Won، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2011
Pages
15
From page
1111
To page
1125
Abstract
Recent developments in ferroelectric (FE) domain imaging techniques have established an understanding of intriguing polarization switching dynamics. In particular, nanoscale studies of FE domain switching phenomena using piezoresponse force microscopy (PFM) can provide important microscopic details on nucleation and subsequent growth of domains, complementing conventional electrical measurements that only give macroscopic information. This review covers recent nanoscale PFM studies of domain switching dynamics in FE thin films. Recent nanoscale PFM-based studies have demonstrated that quenched defects inside the FE thin films play important roles in domain switching processes, including defect-mediated inhomogeneous nucleation, pinning-dominated nonlinear dynamics of domain walls, and many other intriguing phenomena.
Keywords
Thin films , Ferroelectrics , Polarization , Domain switching , Defects , piezoresponse force microscopy
Journal title
Current Applied Physics
Serial Year
2011
Journal title
Current Applied Physics
Record number
1788325
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