• Title of article

    Nanoscale studies of defect-mediated polarization switching dynamics in ferroelectric thin film capacitors

  • Author/Authors

    Yang، نويسنده , , Sang Mo and Yoon، نويسنده , , Jong-Gul and Noh، نويسنده , , Tae Won، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2011
  • Pages
    15
  • From page
    1111
  • To page
    1125
  • Abstract
    Recent developments in ferroelectric (FE) domain imaging techniques have established an understanding of intriguing polarization switching dynamics. In particular, nanoscale studies of FE domain switching phenomena using piezoresponse force microscopy (PFM) can provide important microscopic details on nucleation and subsequent growth of domains, complementing conventional electrical measurements that only give macroscopic information. This review covers recent nanoscale PFM studies of domain switching dynamics in FE thin films. Recent nanoscale PFM-based studies have demonstrated that quenched defects inside the FE thin films play important roles in domain switching processes, including defect-mediated inhomogeneous nucleation, pinning-dominated nonlinear dynamics of domain walls, and many other intriguing phenomena.
  • Keywords
    Thin films , Ferroelectrics , Polarization , Domain switching , Defects , piezoresponse force microscopy
  • Journal title
    Current Applied Physics
  • Serial Year
    2011
  • Journal title
    Current Applied Physics
  • Record number

    1788325