Author/Authors :
Xia، نويسنده , , Z.C and Yuan، نويسنده , , S.L. and Feng، نويسنده , , W. and Zhang، نويسنده , , L.J. and Zhang، نويسنده , , G.H. and Tang، نويسنده , , J. and Liu، نويسنده , , L. and Liu، نويسنده , , S. and Peng، نويسنده , , G. F. Niu and R. M. M. Chen، نويسنده , , D.W. and Chen، نويسنده , , L. and Zheng، نويسنده , , Q.H. and Fang، نويسنده , , Z.H. and Tang، نويسنده , , C.Q.، نويسنده ,
Abstract :
The temperature dependence of the resistivity for composite samples of (1−x)La0.67Ba0.33MnO3+xYSZ(LBMO/YSZ) with different YSZ doping level of x has been investigated in a magnetic field range of 0–7000 Oe, where the YSZ represents yttria-stabilized zirconia (8 mol% Y2O3+92 mol% ZrO2). With increasing YSZ doping level, the range of 0–10%, the metal–insulator transition temperature (TP) decreases. However, the resistivity, specially the low temperature resistivity, increases. Results also show that the YSZ doping level has an important effect on a low field magnetoresistance (LFMR). In the magnetic field of 7000 Oe, a room temperature magnetoresistance value of 20% was observed for the composite with a YSZ doping level of 2%, which is encouraging for potential application of CMR materials at room temperature and low field.
