• Title of article

    Free-standing tetracene single crystal field effect transistor

  • Author/Authors

    Butko، نويسنده , , V.Y. and Chi، نويسنده , , X. and Ramirez، نويسنده , , A.P.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    4
  • From page
    431
  • To page
    434
  • Abstract
    We have fabricated and studied field effect transistors (FETs) on the optically transparent free-standing organic single crystals of tetracene. These FETs exhibit effective hole channel mobility μeff up to 0.15 cm2/Vs and on–off ratios up to 2×107. Using measured values of μeff, thermal activation energy, and a simple model, we deduce an intrinsic free carrier mobility in the range of tens of cm2/Vs, similar to that found in pentacene crystals. These values should be considered only as a rough indication of achievable mobilities in samples much purer than those presently studied. The obtained results show the possibility of FET behavior in transparent crystals with low intrinsic carrier density.
  • Keywords
    A. Organic crystals , A. Semiconductors , B. Crystal growth , D. Electronic transport , D. Recombination and trapping
  • Journal title
    Solid State Communications
  • Serial Year
    2003
  • Journal title
    Solid State Communications
  • Record number

    1788450