Author/Authors :
Sasaki، نويسنده , , Hiroyuki and Tanaka، نويسنده , , Akinori and Kuriyama، نويسنده , , Yosuke and Nagasawa، نويسنده , , Tazumi and Takeda، نويسنده , , Yuitsu and Suzuki، نويسنده , , Shoji and Sato، نويسنده , , Shigeru and Nagase، نويسنده , , Toshiro، نويسنده ,
Abstract :
We have carried out an angle-resolved photoemission study for CoSi2 nanofilms grown on the Si(111)-7×7 substrates. The surface of CoSi2(111) nanofilm changes from the bulk-truncated surface to the surface with additional Si-bilayer by annealing at higher temperature above 825 K. The angle-resolved photoemission spectra of the CoSi2 nanofilm annealed at 853 K show the spectral features originated from the surface resonance state on the CoSi2 surface terminated by Si-bilayer. From the detailed photoemission study, we discuss the surface electronic structure in CoSi2(111) nanofilms grown on Si(111) substrates.
Keywords :
A. Metal–semiconductor thin film structures , A. Silicides , B. Molecular beam epitaxy , E. Angle-resolved photoemission spectroscopies
