Experimental investigation of the CMN matrix element in the band anticrossing model for GaAsN and GaInAsN layers

The temperature dependence of bandgap energy of GaAs0.98N0.02 and Ga0.95In0.05As0.98N0.02 compounds has been analysed in order to determine the CMN matrix element of the band anticrossing model. We have found that the element equals 2.48 and 2.60 eV for GaAs0.98N0.02 and Ga0.95In0.05As0.98N0.02 layers, respectively. When the same value has been assumed for annealed layers, an increase in the energy of the resonant nitrogen level EN has been obtained. Two possible mechanisms leading to the increase in this energy are discussed in this work.