Title of article :
Synthesis and photoelectrochemical behavior of CdS quantum dots-sensitized indium–tin–oxide mesoporous film
Author/Authors :
Chen، نويسنده , , Haining and Zhu، نويسنده , , Liqun and Li، نويسنده , , Weiping and Liu، نويسنده , , Huicong، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2012
Pages :
5
From page :
129
To page :
133
Abstract :
In this paper, we reported an investigation on a new photoelectrode of quantum dots-sensitized solar cell (QDSC) combining indium–tin–oxide (ITO) mesoporous film and CdS quantum dots (QDs). The ITO mesoporous film was prepared by doctor-blade technique and CdS QDs attached on ITO mesoporous film were synthesized by successive ionic layer adsorption and reaction method. X-ray diffraction, field emission scanning electron microscopy, transmission electron microscope, X-ray spectroscopy and UV–vis spectroscopy were used to characterize the samples. The results indicated that the ITO mesoporous film was uniform, crack-free and highly porous. And absorbance in visible region was enhanced after the deposition of CdS QDs on ITO mesoporous film. The photoelectrochemical property of the CdS QDs-sensitized ITO mesoporous film photoelectrode was investigated by forming a photoelectrochemical cell. Photocurrent–voltage measurement showed that the photoelectrode was efficient in the cell as working electrode.
Keywords :
Indium–tin–oxide , Mesoporous film , CdS quantum dot , Photoelectrode , Photoelectrochemical property
Journal title :
Current Applied Physics
Serial Year :
2012
Journal title :
Current Applied Physics
Record number :
1788710
Link To Document :
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