Author/Authors :
Li، نويسنده , , H. and CAI، نويسنده , , K.F. and Du، نويسنده , , Y. and Wang، نويسنده , , H.F. and Shen، نويسنده , , S.Z. and Li، نويسنده , , X.L. and Wang، نويسنده , , Y.Y. and Zhou، نويسنده , , C.W.، نويسنده ,
Abstract :
AgPb18SbTe20−xSex (x = 1, 2, 4) bulk materials were prepared by combining hydrothermal synthesis and melting. Thermoelectric properties were measured from room temperature up to 773K. The materials showed n-type conduction and exhibited degenerate semiconductor behavior. The power factors of the materials varied greatly with increase of Se content (x). Partial substitution of Se for Te in AgPb18SbTe20 resulted in remarkable reduction of thermal conductivity in the whole temperature range and increase of power factor at lower temperatures; therefore, the dimensionless figure of merit, ZT, was enhanced below 600K. A maximum ZT value of ∼0.82 is obtained at 523K for the AgPb18SbTe18Se2 sample.
