Title of article
Ferroelectric properties of Bi3.25−x/3La0.75Ti3−xNbxO12 films prepared by pulsed laser deposition
Author/Authors
Song، نويسنده , , C.H. and Li، نويسنده , , W. and Ma، نويسنده , , J. and Gu، نويسنده , , J. and Yao، نويسنده , , Y.Y. and Feng، نويسنده , , Y. and Lu، نويسنده , , X.M. and Zhu، نويسنده , , J.S. and Wang، نويسنده , , Y.N. and Chan، نويسنده , , W.L.H. and Choy، نويسنده , , C.L.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
775
To page
780
Abstract
Bi4Ti3O12 (BiT), Bi3.25La0.75Ti3O12 (BLT), Bi4−x/3Ti3−xNbxO12 (BTN) and Bi3.25−x/3La0.75Ti3−xNbxO12 (BLTN) thin films have been prepared by pulsed laser deposition. BTN and BLTN films exhibit a maximum in the remanent polarization Pr at a Nb content x=0.018. At this Nb content, the BLTN film has a Pr value (25 μC/cm2) that is much higher than that of BiT and a coercive field (Ec=120 kV/cm) similar to that of BiT. The polarization of this BLTN film is fatigue-free up to 109 switching cycles. The high fatigue resistance is mainly due to the substitution of Bi3+ ions by La3+ ions at the A site and the enhanced Pr arises largely from the replacement of Ti4+ ions by Nb5+ ions at the B site. The mechanisms behind the effects of the substitution at the two sites are discussed.
Keywords
D. Ferroelectric properties
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1788764
Link To Document