• Title of article

    Structural investigations of GeS2–Ga2S3–CdS chalcogenide glasses using Raman spectroscopy

  • Author/Authors

    Wang، نويسنده , , X.F. and Gu، نويسنده , , S.X. and Yu، نويسنده , , J.G. and Zhao، نويسنده , , X.J. and Tao، نويسنده , , H.Z.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    6
  • From page
    459
  • To page
    464
  • Abstract
    Raman investigations were carried out for various compositions of chalcogenide glasses in the GeS2–Ga2S3–CdS system. Addition of Ga2S3 into GeS2 results in the formation of metal–metal bonds and edge-shared GaS4/2 tetrahedra. Ge2+ ions may surround [GaS4/2]1− tetrahedra acting as charge compensators. Upon the addition of CdS into the GeS2–Ga2S3 system, the number of the metal–metal bonds and edge-shared GaS4/2 tetrahedra decreases, resulting in the formation of corner-shared tetrahedra with non-bridging sulfurs (NBS). Cd2+ ions can be dissolved into the glass network as charge compensators for these NBS and exited few [GaS4/2]1− tetrahedra. The high solubility of CdS is ascribed to the dissociation of metal–metal bonds and edge-shared tetrahedra in these Ga-containing glasses.
  • Keywords
    A. Glasses , D. Microstructure , A. Disordered systems , C. Raman spectroscopy
  • Journal title
    Solid State Communications
  • Serial Year
    2004
  • Journal title
    Solid State Communications
  • Record number

    1788852