Effect of barrier thickness on strain uniformity of wire in laterally aligned InGaAs/GaAs quantum wire nanostructures

The effect of barrier thickness on strain uniformity of a laterally aligned array of InGaAs quantum wire in GaAs matrix has been investigated with the finite elements method. A decrease in GaAs barrier thickness was predicted to assist the InGaAs wire to maintain its strain state in the central region up to a longer distance towards the edge of the wire along the width direction. It is suggested that, by reducing the spacing between the quantum wires, it is possible to improve uniformity of strains within the wire, thereby yielding more uniform opto-electronic properties such as sharp and narrow peaks in photoluminescence spectra.