Alloy effects in Ga1−xInxN/GaN heterostructures

We show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the virtual crystal approximation to describe the electronic structure of Ga1−xInxN/GaN heterostructures, while this approximation works very well for the Ga1−xInxAs/GaAs heterostructures.