Title of article :
Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements
Author/Authors :
Qiu، نويسنده , , Z.J. and Gui، نويسنده , , Y.S. and Lin، نويسنده , , T. and Lu، نويسنده , , J. and Tang، نويسنده , , N. and Shen، نويسنده , , B. X. Dai، نويسنده , , N. and Chu، نويسنده , , J.H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
37
To page :
40
Abstract :
The various scattering times of two-dimensional electron gas were investigated in modulation-doped Al0.22Ga0.78N/GaN quantum wells by means of magnetotransport measurements. The ratio of transport and quantum scattering times, τt/τq∼1, shows that the dominant mobility-limiting mechanisms are short-range scattering potentials. The low-field magnetoresistance shows the weak antilocalization and localization phenomenon from which the spin–orbit scattering and inelastic scattering times are obtained. The inelastic scattering time is found to follow the T−1 law, indicating that electron–electron scattering with small energy transfer is the dominant inelastic process.
Keywords :
A. Quantum well , D. Two-dimensional electron gas , D. Magnetoresistance
Journal title :
Solid State Communications
Serial Year :
2004
Journal title :
Solid State Communications
Record number :
1789014
Link To Document :
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