Title of article
The trapping centers of holes in a-As2Se3
Author/Authors
Kounavis، نويسنده , , P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
47
To page
51
Abstract
The density of the trapping centers and their capture radius for holes in a-As2Se3 are determined by analyzing the imaginary term of the modulated photocurrent. The light-induced changes in the imaginary term are also examined to study the influences of the photo structural changes to the density of states and to detect possible hole trapping at light created charged defects.
Keywords
A. Amorphous semiconductors , D. Electronic states (localized) , D. Trapping and recombination
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1789019
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