Title of article :
Temperature dependent Raman scattering in polycrystalline Bi4Ti3O12 thin films
Author/Authors :
Du، نويسنده , , Samuel Y.L. and Chen، نويسنده , , G and Zhang، نويسنده , , M.S، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
Polycrystalline Bi4Ti3O12 thin films were prepared on quartz substrates by pulsed laser deposition. The films were crystallized in the orthorhombic layer perovskite structure confirmed by X-ray diffraction and Raman spectroscopy. The Raman spectra are strongly dependent on temperature. A subtle phase transition in the temperature range 473–573 K exists in polycrystalline BTO thin films, which is evidenced by the disappearance of the Raman band at 116 cm−1 and appearance of a new Raman band at 151 cm−1. The two broad Raman bands centered at the 57 and 93 cm−1 at 300 K break up into clusters of several sharp Raman peaks at 77 K, due to monoclinic distortion of orthorhombic structure at low temperature in the as-prepared Bi4Ti3O12 thin films.
Keywords :
A. Thin films , B. Laser processing , D. Phase transitions , D. phonons
Journal title :
Solid State Communications
Journal title :
Solid State Communications