Title of article
A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition
Author/Authors
Lal، نويسنده , , K. and Ghosh، نويسنده , , P. and Biswas، نويسنده , , D. and Meikap، نويسنده , , A.K and Chattopadhyay، نويسنده , , S.K. and Chatterjee، نويسنده , , Sk and Ghosh، نويسنده , , M. Sai Baba، نويسنده , , K. and Hatada، نويسنده , , R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
479
To page
484
Abstract
Measurement of electrical resistivity in the temperature range 1.5≤T≤300 K of tantalum nitride films prepared by Ion Beam Assisted deposition and pure tantalum films prepared by electron beam evaporation has been carried out. The tantalum film shows a resistivity minimum at Tm=12 K, whereas tantalum nitride shows a decrease in resistivity with an increase in temperature. An attempt has been made to explain such anomalous behavior by using existing theories.
Keywords
D. Ion beam assisted deposition , A. Tantalum nitride , D. Electrical resistivity , D. Electron–electron interaction
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1789142
Link To Document