Title of article :
Structural and electrical properties of nitrogen and aluminum codoped p-type ZnO films
Author/Authors :
Zhang، نويسنده , , Canyun and Li، نويسنده , , Xiaomin and Bian، نويسنده , , Jiming and Yu، نويسنده , , Weidong and Gao، نويسنده , , Xiangdong، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
To resolve the problem of p-type doping in ZnO, nitrogen and aluminum (N–Al) codoped ZnO films were prepared by the ultrasonic spray pyrolysis (USP) technique. The structural and electrical properties of N–Al codoped ZnO films were investigated. The results demonstrate that the undoped ZnO films exhibit the preferential orientation of (002) plane, while ZnO films show high orientation of (101) plane after codoping with N and Al. The N–Al codoped ZnO films under optimum conditions show p-type conduction, with a low resistivity of 1.7×10−2Ω cm, carrier concentration of 5.09×1018 cm−3 and high Hall mobility of 73.6 cm2 V−1 s−1. A conversion from p-type conduction to n-type was observed during the increase of measurement temperature.
Keywords :
A. ZnO thin films , A. Semiconductors , B. Ultrasonic spray pyrolysis , C. N and Al codoping
Journal title :
Solid State Communications
Journal title :
Solid State Communications