Title of article
Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers
Author/Authors
Gong، نويسنده , , Z. and Fang، نويسنده , , Z.D. and Xu، نويسنده , , X.H. and Miao، نويسنده , , Z.H. and Niu، نويسنده , , Z.C. and Feng، نويسنده , , S.L.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
421
To page
424
Abstract
Long wavelength light emission was realized by capping InAs quantum dots (QDs) with short period GaAs/InAs superlattices (SLs) and an InGaAs strain-reducing layer (SRL). The optical properties were systematically investigated by photoluminescence tests. With increasing the periods of SLs, the emission wavelength of InAs QDs shifts from 1.27 to 1.53 μm. We explain the redshift as a result of the increased QD height with the SLs and the reduced strain in the dot caused by InGaAs SRL.
Keywords
A. Quantum dot , B. Molecular beam epitaxy , E. Photoluminescence , A. Superlattice
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1789320
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