Title of article
Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates
Author/Authors
Bian، نويسنده , , L.F. and Jiang، نويسنده , , D.S. and Tan، نويسنده , , P.H. and Lu، نويسنده , , S.L. and Sun، نويسنده , , B.Q. and Li، نويسنده , , L.H. and Harmand، نويسنده , , J.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
707
To page
711
Abstract
The photoluminescence (PL) characteristics of GaAsSbN/GaAs epilayers grown by molecular beam epitaxy (MBE) are carefully investigated. The results show that antimony (Sb) incorporation into GaNAs material has less influence on the N-induced localization states. For the same N concentration, GaAsSbN material can reach an emission wavelength near 1.3 μm more easily than GaInNAs material. The rapid thermal annealing (RTA) experiment shows that the annealing induced rearrangement of atoms and related blueshift in GaAsSbN epilayers are smaller than those in GaNAs and GaInNAs epilayers. The GaAsSbN material can keep a longer emission wavelength near 1.3 μm-emission even after the annealing treatment. Raman spectroscopy analysis gives further insight into the structure stability of GaAsSbN material after annealing.
Keywords
E. RTA , A. GaAsSbN epilayer , D. PL spectra
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1789425
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