Title of article :
A potential red-emitting phosphor with high color-purity for near-UV light emitting diodes
Author/Authors :
Wang، نويسنده , , Zhengliang and Zhang، نويسنده , , Yaling and Xiong، نويسنده , , Li and Li، نويسنده , , Xiaofan and Guo، نويسنده , , Junming and Gong، نويسنده , , Menglian، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2012
Pages :
4
From page :
1084
To page :
1087
Abstract :
New red tungstates phosphors, Na5La1−xLnx(WO4)4 (Ln = Eu, Sm) and Na5Eu1−xSmx(WO4)4, were prepared by solid-state reaction technique. And their structure and photo-luminescent properties were investigated. The introduction of Sm3+ broadened the excitation band around 400 nm of the phosphors, and strengthened the red emission. And the possible energy transfer process from Sm3+ to Eu3+ is discussed. The single red LED was fabricated by combining InGaN chip with Na5Eu0.94Sm0.06(WO4)4 as red phosphor, intense red light can be observed by naked eyes. Then the phosphor Na5Eu0.94Sm0.06(WO4)4 may be a good candidate for red component of near-UV InGaN-based W-LEDs, because of efficient red-emitting with broadened absorption around 400 nm and appropriate CIE chromaticity coordinates (x = 0.65, y = 0.34).
Keywords :
Tungstates phosphor , White-light emitting diode , Photoluminescence
Journal title :
Current Applied Physics
Serial Year :
2012
Journal title :
Current Applied Physics
Record number :
1789474
Link To Document :
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