Title of article :
Hall mobility and characteristics of gas-phase polymerized poly(3-iodothiophene) thin films
Author/Authors :
Lee، نويسنده , , Gum-Joo and Jo، نويسنده , , Sang Hyun and Yang، نويسنده , , Jong-Won and Kim، نويسنده , , Jin-Yeol، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2012
Pages :
5
From page :
1148
To page :
1152
Abstract :
The semi-conductive poly(3-iodothiophene)(P3IT) films were fabricated by gas-phase polymerization through a chemical vapor deposition process. The P3IT nanoscale films have a high crystalline morphologies, and possessed a high Hall mobility up to 10 cm2/Vs. The degree of crystalline and the mobility values measured through Scanning Electron Microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy with structural analysis. These conductive thin films, possessing polycrystalline structures, have a very high mobility and are capable of being applied to organic electronic layers for electrical devices such as the thin film transistors and organic photovoltaic cells.
Keywords :
Conductive polymers , Gas-phase polymerization , Hall mobility , Poly(3-iodothiophene)
Journal title :
Current Applied Physics
Serial Year :
2012
Journal title :
Current Applied Physics
Record number :
1789531
Link To Document :
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