Title of article :
Theoretical investigation of the reflectivity of fullerene-(C60, C70)/AlN multilayers in UV region
Author/Authors :
Bingshe، نويسنده , , Xu and Peide، نويسنده , , Han and Jian، نويسنده , , Liang and Xuguang، نويسنده , , Liu and Huiqiang، نويسنده , , Bao and Tianbao، نويسنده , , Li and Mingwei، نويسنده , , Chen and Ichinose، نويسنده , , Hideki، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
353
To page :
356
Abstract :
Theoretical calculations via a transfer matrix method (TMM) were performed to investigate the possibility of fullerene/AlN multilayer films acting as one-dimensional (1D) photonic band gap (PBG) crystals. The response within and out of the periodic plane of (C60, C70)/AlN multilayers was studied. (C60, C70)/AlN multilayer films presented incomplete PBG behavior in UV region. C60/AlN multilayers with two pairs of 49 nm-C60 and 21 nm-AlN layers exhibited a high reflectivity of 90.4% at a wavelength of about 200 nm. As a consequence, this photonic crystal may be important for achieving materials with an incomplete band gap in the UV region.
Keywords :
A. Photonic band gap , E. TMM method , A. AlN , A. Fullerene , A. Multilayer films
Journal title :
Solid State Communications
Serial Year :
2005
Journal title :
Solid State Communications
Record number :
1789611
Link To Document :
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