Title of article :
Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell
Author/Authors :
Lee، نويسنده , , Shin Buhm and Chang، نويسنده , , Seo Hyoung and Yoo، نويسنده , , Hyang Keun and Yoon، نويسنده , , Moon Jee and Yang، نويسنده , , Sang Mo and Kang، نويسنده , , Bo Soo، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2012
Pages :
3
From page :
1515
To page :
1517
Abstract :
We find that resistance switching (RS) phenomena change reversibly between bipolar RS (BRS) and unipolar RS (URS) in a Pt/SrTiOx/Pt cell. For an asymmetric electrode configuration of Ti/SrTiOx/Pt cells whose top and bottom interfaces are Ohmic and Schottky-like rectifying, we determine that BRS only occurs when a positive voltage is applied to the bottom Pt electrode at the forming process. During the set process of BRS in a Pt/SrTiOx/Pt cell, O2 bubbles develop on the top Pt electrode. From the experimental results for a single sample in which both BRS and URS occur, O2− ion movement and consequent interfacial resistance modification might play an important role in BRS but not URS.
Keywords :
resistance switching , Resistance random-access memory , MEMRISTOR
Journal title :
Current Applied Physics
Serial Year :
2012
Journal title :
Current Applied Physics
Record number :
1789827
Link To Document :
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