Title of article
Bulk modulus and its pressure derivatives of cuprous halides
Author/Authors
Misra، نويسنده , , G. and Goyal، نويسنده , , S.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
637
To page
640
Abstract
The ab initio pseudopotential approach to the total crystal energy is presented using local DF formalism. The expressions for bulk modulus, its first and second pressure derivatives for group I–VII semiconductor binary compounds are derived. The expression for the second pressure derivative of the bulk modulus for four-fold crystal structures is derived for the first time within the pseudopotential framework. The computed results of the bulk modulus for cuprous halides are very close to the available experimental data.
Keywords
A. Semiconductors , C. Four-fold crystal structure , D. Elasticity-bulk modulus , D. Electronic band structure
Journal title
Solid State Communications
Serial Year
2005
Journal title
Solid State Communications
Record number
1789933
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