Title of article :
Enhanced thermoelectric properties of bismuth intercalated compounds BixTiS2
Author/Authors :
Li، نويسنده , , D. and Qin، نويسنده , , X.Y. and Zhang، نويسنده , , J. and Wang، نويسنده , , L. and Li، نويسنده , , H.J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
The thermoelectric properties of Bi intercalated compounds BixTiS2 have been investigated at the temperatures from 5 to 310 K. The results indicate that Bi intercalation into TiS2 leads to substantial decrease of its electrical resistivity (one order low for x=0.05 and two orders low for x=0.15, 0.25 at 300 K) and lattice thermal conductivity (22, 115 and 158% low at 300 K for x=0.05, 0.15 and 0.25, respectively). Specially, the figure of merit, ZT, of lightly intercalated compound Bi0.05TiS2 has been improved at all temperatures investigated, and specifically reaches 0.03 at 300 K, which is about twice as large as that of TiS2.
Keywords :
B. Chemical synthesis , A. Semiconductor , C. Thermoelectric properties
Journal title :
Solid State Communications
Journal title :
Solid State Communications