Title of article
On the possibility of a phonon mediated transport anomaly in MgB2 under compression
Author/Authors
Garg، نويسنده , , Alka B. and Verma، نويسنده , , A.K. and Modak، نويسنده , , P. and Gaitonde، نويسنده , , D.M. and Rao، نويسنده , , R.S. and Vijayakumar، نويسنده , , V. and Godwal، نويسنده , , B.K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
285
To page
289
Abstract
Results of electrical resistance measurements on MgB2 at ambient temperature up to 25 GPa are presented. An abrupt reduction of nearly 30% in resistance around 18 GPa is observed. Band structure calculations in the presence of a frozen-in distortion of the E2g phonon mode reveal that one of the closed Fermi sheets corresponding to the σ-band opens along the Γ–A direction at this pressure. It is suggested that the anomaly observed in the resistance is due to this phonon mediated electronic topological transition (ETT).
Keywords
D. ETT , E. High pressure , A. MgB2 , A. DAC , D. electrical resistance
Journal title
Solid State Communications
Serial Year
2005
Journal title
Solid State Communications
Record number
1790063
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