Author/Authors :
Nahm، نويسنده , , Changwoo and Shin، نويسنده , , Sungjin and Lee، نويسنده , , Woojin and Kim، نويسنده , , Jae Ik and Jung، نويسنده , , Dae-Ryong and Kim، نويسنده , , Jongmin and Nam، نويسنده , , Seunghoon and Byun، نويسنده , , Sujin and Park، نويسنده , , Byungwoo، نويسنده ,
Abstract :
Transparent and conductive Ga-doped ZnO (ZnO:Ga) films were post-annealed after sputter deposition, and their structural and electrical properties were investigated. Post-annealing led to an improvement of crystallinity along the [001] direction, but did not change lateral grain size. Therefore, carrier concentration and electron mobility of films were analyzed as a function of crystallinity. The electrical parameters were obtained with both optical reflectance based on the Drude free-electron model and the Hall method, and similar tendencies were observed within the two methods. Even though the lowest resistivity was demonstrated by the film annealed at 550 °C, the optimum values for carrier concentration and mobility were observed in films with different post-annealing temperatures.
