Title of article :
Modification of the charge ordering transition in the quasi-one-dimensional conductor (TMTTF)2SbF6 under pressure
Author/Authors :
Nagasawa، نويسنده , , M. and Nad، نويسنده , , F. and Monceau، نويسنده , , P. and Fabre، نويسنده , , J.-M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
6
From page :
262
To page :
267
Abstract :
We have measured the temperature dependences of the conductance G and the dielectric permittivity ε′ of the (TMTTF)2SbF6 compound under a moderate pressure. The maximum of G(T) associated with the Mott–Hubbard localization disappears under pressure. With increasing pressure the peak in ε′(T), corresponding to the charge ordering (CO) phase transition, shifts to lower temperatures and broadens. At pressures above 0.24 GPa, ε′(T) becomes strongly frequency dependent. These modifications are explained in the frame of the extended Hubbard model and a slowing down behavior.
Keywords :
D. Ferroelectric transition , A. Strongly correlated systems , D. Dielectric permittivity , E. Mott–Hubbard localization
Journal title :
Solid State Communications
Serial Year :
2005
Journal title :
Solid State Communications
Record number :
1790275
Link To Document :
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