Raman scattering studies of the Ge–In sulfide glasses

Room temperature Raman scattering measurements of samples of the (1−x)GeS2–xIn2S3 (x=0.00–0.35) system have been conducted together with the FTIR transmission spectra of partial samples. Based on the Raman scattering and FTIR transmission spectra of the prepared defect spinel polycrystalline In2S3, the additional peaks at 306 and 245 cm−1 were ascribed to the local symmetric stretching vibration of InS4 tetrahedra and InS6 octahedra, respectively. According to the Raman scattering spectral evolution of the Ge–In sulfide glasses, the microstructure of the studied glasses was considered to be that S3Ge–GeS3 and S3In–InS3 ethane-like units originated from the sulfur deficient with the addition of In2S3 are homogeneously dispersed in a disordered polymer network formed by GeS4, InS4 tetrahedra and a small quantity of InS6 octahedra interconnected by sulfur bridges.