Title of article
Nanostructural analysis of ZnO:Al thin films for carrier-transport mechanisms
Author/Authors
Lee، نويسنده , , Seung Yoon and Lee، نويسنده , , Woojin and Nahm، نويسنده , , Changwoo and Kim، نويسنده , , Jongmin and Byun، نويسنده , , Sujin and Hwang، نويسنده , , Taehyun and Lee، نويسنده , , Byung-Kee and Jang، نويسنده , , Young-Il and Lee، نويسنده , , Sungeun and Lee، نويسنده , , Heon-Min and Park، نويسنده , , Byungwoo، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2013
Pages
4
From page
775
To page
778
Abstract
The carrier mobility of sputter-deposited Al-doped ZnO transparent-conducting (ZnO:Al) thin films was controlled between 22 and 48 cm2/Vs by varying the ZnO:Al seed layer. The statistical distribution of the [001] grain misorientation was characterized from the X-ray diffraction rocking curve in the range from 0.043 (2.5°) to 0.179 rad (10.2°). The grain-boundary energy barriers (Eb) from Setoʹs model [1] clearly exhibit linear dependence on the grain-boundary misorientation angle (ω) according to the equation Eb = 78 ± 4 + 173 ± 32 ω meV.
Keywords
Al-doped ZnO , transparent conducting oxide , sputtering
Journal title
Current Applied Physics
Serial Year
2013
Journal title
Current Applied Physics
Record number
1790512
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