• Title of article

    Bulk Sn1−xMnxO2 magnetic semiconductors without room-temperature ferromagnetism

  • Author/Authors

    Gao، نويسنده , , K.H. and Li، نويسنده , , Z.Q. and Liu، نويسنده , , X.J. and Song، نويسنده , , W. and Liu، نويسنده , , H. and Jiang، نويسنده , , E.Y.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    175
  • To page
    178
  • Abstract
    Polycrystalline Sn1−xMnxO2 (0≤x≤0.05) diluted magnetic semiconductors were prepared by solid-state reaction method and their structural and magnetic properties had been investigated systematically. The three Mn-doped samples (x=0.01, 0.03, 0.05) undergo paramagnetic to ferromagnetic phase transitions upon cooling, but their Curie temperatures are far lower than room temperature. The magnetization cannot be attributed to any identified impurity phase. It is also found that the magnetization increases with increasing Mn doping, while the ratio of the Mn ions contributing to ferromagnetic ordering to the total Mn ions decreases.
  • Keywords
    D. Solid state reaction , A. Diluted magnetic semiconductor , D. Room temperature ferromagnetism
  • Journal title
    Solid State Communications
  • Serial Year
    2006
  • Journal title
    Solid State Communications
  • Record number

    1790699