Title of article
Bulk Sn1−xMnxO2 magnetic semiconductors without room-temperature ferromagnetism
Author/Authors
Gao، نويسنده , , K.H. and Li، نويسنده , , Z.Q. and Liu، نويسنده , , X.J. and Song، نويسنده , , W. and Liu، نويسنده , , H. and Jiang، نويسنده , , E.Y.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
175
To page
178
Abstract
Polycrystalline Sn1−xMnxO2 (0≤x≤0.05) diluted magnetic semiconductors were prepared by solid-state reaction method and their structural and magnetic properties had been investigated systematically. The three Mn-doped samples (x=0.01, 0.03, 0.05) undergo paramagnetic to ferromagnetic phase transitions upon cooling, but their Curie temperatures are far lower than room temperature. The magnetization cannot be attributed to any identified impurity phase. It is also found that the magnetization increases with increasing Mn doping, while the ratio of the Mn ions contributing to ferromagnetic ordering to the total Mn ions decreases.
Keywords
D. Solid state reaction , A. Diluted magnetic semiconductor , D. Room temperature ferromagnetism
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1790699
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