Title of article
Transferability of optical bowing parameters between binary and ternary group-IV alloys
Author/Authors
DʹCosta، نويسنده , , Vijay R. and Cook، نويسنده , , Candi S. and Menéndez، نويسنده , , José and Tolle، نويسنده , , John and Kouvetakis، نويسنده , , John and Zollner، نويسنده , , Stefan، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
309
To page
313
Abstract
We present a detailed analysis of the compositional dependence of the average E ¯ 1 of the E1 and E1+Δ1 transition energies in Ge1−x−ySixSny alloys. We show that this dependence can be explained in terms of three bowing parameters—bSiGe, bGeSn, and bSiSn—which scale with the product ΔχΔR of the Phillips electronegativity and size mismatches between Si, Ge, and Sn.
Keywords
A. Semiconductors , D. Optical properties
Journal title
Solid State Communications
Serial Year
2006
Journal title
Solid State Communications
Record number
1790758
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