Device characteristics and tight binding based modeling of bilayer graphene field-effect transistor

In this work the device characteristic of bilayer graphene MOSFET is investigated by calculation of transmission coefficient using tight-binding method. The real shape of applied potential on the bilayer graphene was included in the tight binding calculation. As obtained transmission coefficient is used to explore the current–voltage characteristics of the device in both on and off regimes. Electrical behavior of the device was obtained for different gate and drains voltages and channel length.