The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes

The capacitance–voltage–frequency (C–V–f) and conductance–voltage–frequency (G/w–V–f) characteristics of Al/perylene/p-Si Schottky barrier diodes (SBDs) fabricated with spin coating system have been investigated in the frequency range of 30 kHz–2 MHz at room temperature. In order to elucidate the electrical characteristics of SBDs with perylene interface, the voltage and frequency dependent series resistance (Rs), frequency dependent density distribution profile of interface state (Nss) were obtained. The measurements of C and G/w were found to be strongly dependent on bias voltage and frequency for Al/perylene/p-Si SBDs. For each frequency, the Rs–V plot gives a peak, decreasing with increasing frequencies. Also, it has been shown that the interface states density exponentially decreases with increasing frequency. The C–V–f and G/w–V–f characteristics confirm that the Nss and Rs of the diode are important parameters that strongly influence the electric parameters in metal/polymer/semiconductor (MPS) structure.