Title of article :
Optical and crystal improvements of semipolar (11-22) GaN/m-sapphire by in-situ thermal etching process
Author/Authors :
Song، نويسنده , , Ki-Ryong and Oh، نويسنده , , Dong-Sub and Lee، نويسنده , , Sung-Nam، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2013
Abstract :
We investigated the optical and crystal qualities of semipolar (11-22) GaN grown on m-plane sapphire using three-step growth technique which consisted of seed GaN growth, in-situ thermal etching process (I-STEP), and lateral growth step. By introducing three-step growth, we achieved high optical and crystal qualities of semipolar (11-22) GaN films compared with those grown by conventional one-step growth. In particular, as the positions of I-STEP were decreased from 1.0 to 0.25 μm toward sapphire substrate, the full width at half maximum of the X-ray rocking curve was effectively decreased from 1083 to 828 arcsec, respectively. Furthermore, photoluminescence results showed that the bandedge emission intensity of semipolar (11-22) GaN with I-STEP was 56% higher than that with conventional growth technique. Based on these results, we suggested that the three-step growth would be effective to improve the crystal and optical qualities of semipolar (11-22) GaN/m-sapphire.
Keywords :
GaN , XRC , MOCVD , Semipolar , Pl
Journal title :
Current Applied Physics
Journal title :
Current Applied Physics