Title of article :
Electronic structure and site occupation for the intermediate phase of LaNi4.5Al0.5Hy
Author/Authors :
Chen، نويسنده , , Dong and Gao، نويسنده , , Tao and Li، نويسنده , , Guixia and Zhou، نويسنده , , Jingjing and Tang، نويسنده , , Lijuan، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
6
From page :
378
To page :
383
Abstract :
The crystal structure, electronic structure and hydrogen site occupancy of LaNi4.5Al0.5Hy intermediate phase ( y = 2.0 , 3.0, 4.0) have been investigated using the full-potential linearized augmented plane wave (FLAPW) method. For the first time we analyzed the interstitial site occupation of hydrogen atoms. The H atoms were found to prefer the 6m, 3f and 12n sites, while no 4h sites were occupied. A narrowed Ni-d band is found due to the lattice expansion: the total DOS at E F increases with y , which indicates that the compounds become less stable. The interaction between Al and Ni, with H plays a dominant role in the stability of LaNi4.5Al0.5Hy intermediate phase. The smaller the shift of E F towards the higher energy region, the more stable the compounds will be. Our results are compared with experimental data and discussed in the light of previous works.
Keywords :
A. Hydrogen storage materials , A. LaNi4.5Al0.5 , D. Electronic structure , D. Intermediate phase
Journal title :
Solid State Communications
Serial Year :
2007
Journal title :
Solid State Communications
Record number :
1791307
Link To Document :
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