• Title of article

    Growth of single-walled carbon nanotubes on silicon nanowires

  • Author/Authors

    Yoshida، نويسنده , , Hideto and Uchiyama، نويسنده , , Tetsuya and Kikkawa، نويسنده , , Jun-ichi Takeda، نويسنده , , Seiji، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    3
  • From page
    632
  • To page
    634
  • Abstract
    Single-walled carbon nanotubes (SWNTs) have been grown on silicon nanowires (SiNWs) by ethanol chemical vapor deposition (CVD) with Co catalysts. We have found that a surface SiOx layer of SiNWs is necessary for the formation of active Co catalysts. In fact, the yield of the SWNT/SiNW heterojunctions gradually decreases as the thickness of the surface SiOx layer decreases. Since thin SiNWs are transparent to an electron beam, the Co nanoparticles on SiNWs can be easily observed as well as SWNTs by TEM. Therefore, the relationship between the diameters of each SWNT and its catalyst nanoparticle has been investigated. The diameters of SWNTs are equal to or slightly smaller than those of the catalyst nanoparticles.
  • Keywords
    A. Carbon nanotubes , A. Silicon nanowires , B. Chemical vapor deposition , C. Transmission electron microscopy
  • Journal title
    Solid State Communications
  • Serial Year
    2007
  • Journal title
    Solid State Communications
  • Record number

    1791422