• Title of article

    The Stark effect on a bound hole in -acceptor doped GaAs/ AlxGa1−xAs heterostructures

  • Author/Authors

    ?usakowski، نويسنده , , J. and Friedland، نويسنده , , K.J. and Ploog، نويسنده , , K.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    3
  • From page
    299
  • To page
    301
  • Abstract
    There are only a few experimental reports on measurements of the Stark effect on shallow acceptors. We show that measurements of the degree of circular polarization of the luminescence originating from a free-to-bound Γ 6 → Γ 8 transition allows us to determine the dipole moment of a substitutional acceptor in a crystal of T d symmetry. We suggest the performance of such experiments in a single GaAs/GaAlAs heterostructure δ -doped with acceptors. Thus we propose an experimental method for investigation of the Stark effect in solids.
  • Keywords
    D. Shallow acceptors , D. Stark effect
  • Journal title
    Solid State Communications
  • Serial Year
    2007
  • Journal title
    Solid State Communications
  • Record number

    1791527