Title of article :
The Stark effect on a bound hole in -acceptor doped GaAs/ AlxGa1−xAs heterostructures
Author/Authors :
?usakowski، نويسنده , , J. and Friedland، نويسنده , , K.J. and Ploog، نويسنده , , K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
3
From page :
299
To page :
301
Abstract :
There are only a few experimental reports on measurements of the Stark effect on shallow acceptors. We show that measurements of the degree of circular polarization of the luminescence originating from a free-to-bound Γ 6 → Γ 8 transition allows us to determine the dipole moment of a substitutional acceptor in a crystal of T d symmetry. We suggest the performance of such experiments in a single GaAs/GaAlAs heterostructure δ -doped with acceptors. Thus we propose an experimental method for investigation of the Stark effect in solids.
Keywords :
D. Shallow acceptors , D. Stark effect
Journal title :
Solid State Communications
Serial Year :
2007
Journal title :
Solid State Communications
Record number :
1791527
Link To Document :
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