• Title of article

    Enhanced magneto-electrical properties and room temperature magnetoresistance in lightly doped manganite thin films

  • Author/Authors

    Prasad، نويسنده , , Ravikant and Singh، نويسنده , , M.P. and Siwach، نويسنده , , P.K. and Prellier، نويسنده , , W. and Singh، نويسنده , , H.K.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    4
  • From page
    445
  • To page
    448
  • Abstract
    We report the effect of compressive strain on magnetic and magneto-electrical properties of lightly doped manganite La0.88Sr0.12MnO3 thin films. Films, having 5–60 nm thickness, were grown on (001) LaAlO3 and (001) SrTiO3 substrate by DC-magnetron sputtering. These films show a magnetoresistance as high as ∼65% at room temperature and insulator–metal transition temperature ( T IM ) ∼ 320 K . Further, we demonstrate that a small variation in strain causes significant changes in their properties. We have discussed the possible origin of these features and compared with the reported literature.
  • Keywords
    D. Magnetoresistance , D. Strain effect , A. Manganite thin film , B. DC-sputtering
  • Journal title
    Solid State Communications
  • Serial Year
    2007
  • Journal title
    Solid State Communications
  • Record number

    1791596