Title of article
Enhanced magneto-electrical properties and room temperature magnetoresistance in lightly doped manganite thin films
Author/Authors
Prasad، نويسنده , , Ravikant and Singh، نويسنده , , M.P. and Siwach، نويسنده , , P.K. and Prellier، نويسنده , , W. and Singh، نويسنده , , H.K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
445
To page
448
Abstract
We report the effect of compressive strain on magnetic and magneto-electrical properties of lightly doped manganite La0.88Sr0.12MnO3 thin films. Films, having 5–60 nm thickness, were grown on (001) LaAlO3 and (001) SrTiO3 substrate by DC-magnetron sputtering. These films show a magnetoresistance as high as ∼65% at room temperature and insulator–metal transition temperature ( T IM ) ∼ 320 K . Further, we demonstrate that a small variation in strain causes significant changes in their properties. We have discussed the possible origin of these features and compared with the reported literature.
Keywords
D. Magnetoresistance , D. Strain effect , A. Manganite thin film , B. DC-sputtering
Journal title
Solid State Communications
Serial Year
2007
Journal title
Solid State Communications
Record number
1791596
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