Title of article :
Structural and photoluminescence properties of thermally evaporated Cd1−xMnxS nano-crystalline films
Author/Authors :
Sreekantha Reddy، نويسنده , , D. and Raja Reddy، نويسنده , , D. and Koteeswara Reddy، نويسنده , , N. and Gunasekhar، نويسنده , , K.R. and Vijayalakshmi، نويسنده , , R.P. and Reddy، نويسنده , , B.K. and Sreedhara Reddy، نويسنده , , P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
6
From page :
466
To page :
471
Abstract :
Thin films of Cd1−xMnxS ( 0 ≤ x ≤ 0.5 ) were formed on glass substrates by resistive vacuum thermal evaporation. All the films were deposited at 300 K and the films were annealed at 373, 473 and 573 K for 1 h in a vacuum of 10−6 mbar. Atomic force microscopy (AFM) studies showed that all the films investigated were in nano-crystalline form with a grain size in the range 36–82 nm. All the films exhibited a wurtzite structure of the host material. The lattice parameters varied linearly with composition following Vegard’s law in the entire composition range. Photoluminescence studies showed that two distinct emission bands were observed for each Cd1−xMnxS compound. One corresponds to internal transition and the other one is due to the transition of Mn2+ ions in interstitial sites or in small ‘Mn’ chalcogenic clusters.
Keywords :
A. Diluted magnetic semiconductors , A. Cd1?xMnxS nano-crystalline films , D. Resistive thermal evaporation , E. Photoluminescence
Journal title :
Solid State Communications
Serial Year :
2007
Journal title :
Solid State Communications
Record number :
1791605
Link To Document :
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