Title of article
Mobility-independent doping in crystalline rubrene field-effect transistors
Author/Authors
So، نويسنده , , Woo-young and Wikberg، نويسنده , , J. Magnus and Lang، نويسنده , , David V. and Mitrofanov، نويسنده , , Oleg and Kloc، نويسنده , , Christian L. and Siegrist، نويسنده , , Theo and Sergent، نويسنده , , Arthur M. and Ramirez، نويسنده , , Arthur P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
483
To page
486
Abstract
We report doping effects in an organic semiconductor, crystalline rubrene. Oxygen-related states are introduced (removed) by annealing in oxygen (vacuum), at an elevated temperature. Room temperature stability is found in the resulting effects: (1) about two orders of magnitude increase in carrier density at equilibrium, (2) significant modification of threshold voltages, and (3) an unchanged field-effect mobility in the on-current state. Density of states data are modeled as tunneling from the valence band in the channel region into deep-level acceptors in the adjacent region. These oxygen acceptors are the likely dopant species.
Keywords
A. Organic crystals , A. Semiconductors , C. Impurities in semiconductors , D. Electronic states (localized)
Journal title
Solid State Communications
Serial Year
2007
Journal title
Solid State Communications
Record number
1791613
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