• Title of article

    Effect of electron–hole spatial correlation on spin relaxation dynamics in InAs submonolayer

  • Author/Authors

    Sun، نويسنده , , Zheng and Xu، نويسنده , , Z.Y. and Ruan، نويسنده , , X.Z. and Ji، نويسنده , , Yang and Sun، نويسنده , , B.Q. and Wang، نويسنده , , M. and Ni، نويسنده , , H.Q.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    3
  • From page
    158
  • To page
    160
  • Abstract
    Using time-resolved photoluminescence and time-resolved Kerr rotation spectroscopy, we explore the unique electron spin behavior in an InAs submonolayer sandwiched in a GaAs matrix, which shows very different spin characteristics under resonant and non-resonant excitations. While a very long spin relaxation lifetime of a few nanoseconds at low temperature is observed under non-resonant excitation, it decreases dramatically under resonant excitation. These interesting results are attributed to the difference in electron–hole interactions caused by non-geminate or geminate capture of photo-generated electron–hole pairs in the two excitation cases, and provide a direct verification of the electron–hole spatial correlation effect on electron spin relaxation.
  • Keywords
    D. Spin relaxation , E. TRKR , A. InAs SML
  • Journal title
    Solid State Communications
  • Serial Year
    2007
  • Journal title
    Solid State Communications
  • Record number

    1791746