Author/Authors :
Zhang، نويسنده , , Z. and Zhang، نويسنده , , R. and Liu، نويسنده , , B. and Xie، نويسنده , , Z.L. and Xiu، نويسنده , , X.Q. and Han، نويسنده , , P. and Lu، نويسنده , , H. and Zheng، نويسنده , , Y.D. and CHEN، نويسنده , , Y.H. and Tang، نويسنده , , C.G. and Wang، نويسنده , , Z.G.، نويسنده ,
Abstract :
The circular photogalvanic effect (CPGE) is observed in InN at inter-band excitation. The function of the CPGE induced current on laser helicity is experimentally demonstrated and illustrated with the microscopic model. A spin-dependent current obtained in InN is one order larger than in the AlGaN/GaN heterostructures at inter-band excitation. The dependence of CPGE current amplitude on light power and incident angle can be well evaluated with phenomenological theory. This sizeable spin-dependent current not only provides an opportunity to realize spin polarized current at room temperature, but also can be utilized as a reliable tool of spin splitting investigation in semiconductors.
