Title of article
A quantitative study on the effect of nitrogen concentration on two-dimensional electron gas (2DEG) mobility in a dilute nitride GaAsN/AlGaAs heterostructure
Author/Authors
Eshghi، نويسنده , , Hosein and Mootabian، نويسنده , , Mahnaz، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
80
To page
83
Abstract
Detailed theoretical analysis of the temperature dependence of two-dimensional electron gas mobility data in GaAs1−xNx/Al0.38Ga0.62As samples ( x = 0 , 0.1% and 0.4%) shows that, as x increases, the dislocation density and the number of ionized impurities in the potential well increase by a factor of ∼ ×300 and ∼ ×500, respectively.
Keywords
D. Electronic transport , A. Semiconductors , A. Nanostructures
Journal title
Solid State Communications
Serial Year
2011
Journal title
Solid State Communications
Record number
1791914
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