Title of article :
(In, Mn)As nanowires with ultrahigh Mn concentration: Growth, morphology and magnetic anisotropy
Author/Authors :
Xu، نويسنده , , F. and Huang، نويسنده , , P.W. and Huang، نويسنده , , J.H. and Huang، نويسنده , , R.T. and Lee، نويسنده , , W.N. and Chin، نويسنده , , T.S. and Du، نويسنده , , Y.W.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Abstract :
(In,Mn)As nanowires with ultrahigh Mn concentration have been successfully grown on GaAs(001) substrates by molecular beam epitaxy. The morphology dependences on Mn concentration and growth temperature are investigated. High Mn concentration and high growth temperature are both necessary for the growth of nanowires. All the (In,Mn)As nanowires are self-aligned along [−110]GaAs, and therefore have the shape magnetic anisotropy with the easy axis along the alignment orientation of the nanowires.
Keywords :
A. Magnetic semiconductor nanowire , B. Molecular-beam epitaxy , C. (In , Mn)As , D. Self-alignment
Journal title :
Solid State Communications
Journal title :
Solid State Communications
