Title of article :
Raman scattering investigations on Co-doped ZnO epitaxial films: Local vibration modes and defect associated ferromagnetism
Author/Authors :
Cao، نويسنده , , Qiang and He، نويسنده , , Shumin and Deng، نويسنده , , Yuanyuan and Zhu، نويسنده , , Dapeng and Cui، نويسنده , , Xiaodong and Liu، نويسنده , , Guolei and Zhang، نويسنده , , Huaijin and Yan، نويسنده , , Shishen and Chen، نويسنده , , Yanxue and Mei، نويسنده , , Liangmo، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2014
Pages :
5
From page :
744
To page :
748
Abstract :
Raman scattering spectroscopy has been performed on high quality Co-doped ZnO epitaxial films, which were grown on Al2O3 (0001) by oxygen-plasma assisted molecular beam epitaxy. Raman measurements revealed two local vibration modes (LVMs) at 723 and 699 cm−1 due to the substitution of Co2+ in wurtzite ZnO lattice. The LVM at 723 cm−1 is found to be an elemental sensitive vibration mode for Co substitution. The LVM at 699 cm−1 can be attributed to enrichment of Co2+ bound with oxygen vacancy, the cobalt–oxygen vacancy–cobalt complexes, in Zn1−xCoxO films associated with ferromagnetism. The intensity of LVM at 699 cm−1, as well as saturated magnetization, enhanced after the vacuum annealing and depressed after oxygen annealing.
Keywords :
Raman scattering , Zn1?xCoxO , Oxide magnetic semiconductor , epitaxial films
Journal title :
Current Applied Physics
Serial Year :
2014
Journal title :
Current Applied Physics
Record number :
1792102
Link To Document :
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