Title of article
Dielectric functions and interband transitions of InxAl1 − xP alloys
Author/Authors
Kim، نويسنده , , T.J. and Hwang، نويسنده , , S.Y. and Byun، نويسنده , , J.S. and Aspnes، نويسنده , , De-Chih Lee، نويسنده , , E.H. and Song، نويسنده , , J.D. and Liang، نويسنده , , C.-T. and Chang، نويسنده , , Y.-C. and Park، نويسنده , , H.G. and Choi، نويسنده , , J. and Kim، نويسنده , , J.Y. and Kang، نويسنده , , Y.R. and PARK، نويسنده , , J.C. and Kim، نويسنده , , Y.D.، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2014
Pages
4
From page
1273
To page
1276
Abstract
We report pseudodielectric functions <ε> from 1.5 to 6.0 eV of InxAl1 − xP ternary alloy films. Data were obtained by spectroscopic ellipsometry on 1.2 μm thick films grown on (001) GaAs substrates by molecular beam epitaxy. Artifacts were minimized by real-time assessment of overlayer removal, leading to accurate representations of the bulk dielectric responses of these materials. Critical-point (CP) energies were obtained from numerically calculated second energy derivatives, and their Brillouin-zone origins identified by band-structure calculations using the linear augmented Slater-type orbital method.
Keywords
ellipsometry , InAlP , Dielectric function , critical point
Journal title
Current Applied Physics
Serial Year
2014
Journal title
Current Applied Physics
Record number
1792211
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