Title of article :
Synthesis of nanocrystalline α - Zn2SiO4 at ZnO–porous silicon interface: Phase transition study
Author/Authors :
Singh، نويسنده , , R.G. and Singh، نويسنده , , Fouran and Mehra، نويسنده , , R.M. and Kanjilal، نويسنده , , D. and Agarwal، نويسنده , , V.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Abstract :
Thermal annealing induced formation of nanocrystalline Zinc silicate (α-Zn2SiO4) at the interface of ZnO–porous silicon (PSi) nanocomposites is reported. The PSi templates were formed by electrochemical anodization of p-type (100) Si and ZnO crystallites were deposited on the PSi surface by a Sol–gel spin coating process. The formation of α-Zn2SiO4 is confirmed by glancing angle X-ray diffraction and Fourier transform infrared spectroscopy studies. The presence of intense yellow-green emission also confirms the formation of α-Zn2SiO4. The mechanism of silicate phase formation at the ZnO–PSi interface and the origin of various photoluminescence (PL) bands are discussed in view of its potential applications in advanced optoelectronic devices.
Keywords :
A. Nanocrystalline zinc silicate , D. Phase transition , C. Structure and photoluminescence , B. Sol–gel processes
Journal title :
Solid State Communications
Journal title :
Solid State Communications