• Title of article

    Ab initio electronic band structure calculation of InP in the wurtzite phase

  • Author/Authors

    Dacal، نويسنده , , Luis C.O. and Cantarero، نويسنده , , Andrés، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    4
  • From page
    781
  • To page
    784
  • Abstract
    We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a = 0.4150 nm , c = 0.6912 nm , and an internal parameter u = 0.371 , showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actual wurtzite structure is compressed (−1.3%) in plane and expanded (0.7%) along the c -direction. The value of the calculated band gaps agrees well with recent optical experiments. The calculations are also consistent with the optical transitions found using polarized light.
  • Keywords
    A. Semiconductor , A. InP wurtzite , D. Electronic band structure
  • Journal title
    Solid State Communications
  • Serial Year
    2011
  • Journal title
    Solid State Communications
  • Record number

    1792396