Title of article
Ab initio electronic band structure calculation of InP in the wurtzite phase
Author/Authors
Dacal، نويسنده , , Luis C.O. and Cantarero، نويسنده , , Andrés، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
781
To page
784
Abstract
We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a = 0.4150 nm , c = 0.6912 nm , and an internal parameter u = 0.371 , showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actual wurtzite structure is compressed (−1.3%) in plane and expanded (0.7%) along the c -direction. The value of the calculated band gaps agrees well with recent optical experiments. The calculations are also consistent with the optical transitions found using polarized light.
Keywords
A. Semiconductor , A. InP wurtzite , D. Electronic band structure
Journal title
Solid State Communications
Serial Year
2011
Journal title
Solid State Communications
Record number
1792396
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