Title of article
Ballistic transport in extended Datta–Das spin field effect transistors
Author/Authors
Xiao، نويسنده , , Yun-Chang and Zhu، نويسنده , , Jun-Rui and Deng، نويسنده , , Wen-Ji، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
6
From page
1214
To page
1219
Abstract
The model of the Datta–Das spin field effect transistor [S. Datta, B. Das, Appl. Phys. Lett. 56 (1990) 665] is extended in several respects: (1) the Rashba effect and Dresselhaus effect coexist; (2) the incoming and outgoing leads are both ferromagnetic; (3) the interfacial scattering and band mismatch are taken into account. By using the Griffith boundary conditions, the transmission coefficients and, thus, the Landauer–Büttiker conductance are obtained analytically. The transmission probability and conductance of the spin field effect transistor are studied in detail.
Keywords
D. Dresselhaus effect , E. Spin field effect transistor , D. Rashba effect
Journal title
Solid State Communications
Serial Year
2011
Journal title
Solid State Communications
Record number
1792560
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