Title of article
Hybrid AMR/PHR ring sensor
Author/Authors
Oh، نويسنده , , Sunjong and Patil، نويسنده , , P.B. and Hung، نويسنده , , Tran Quang and Lim، نويسنده , , Byunghwa and Takahashi، نويسنده , , Migaku and Kim، نويسنده , , Dong Young and Kim، نويسنده , , CheolGi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
1248
To page
1251
Abstract
The AMR (anisotropic magnetoresistance) and PHR (planar Hall resistance) contribution was analyzed for fabricated ring type sensor junctions in single and multiring bridge sensors, and their field sensitivity was examined. The voltage profile, i.e. the sum of AMR and PHR effects, reveal anti-symmetric behavior with the magnetic field with small offsets due to the self-balancing of ring arm resistances, but the voltage variations for the external field are additive for all junction components. The field sensitivity of the resistance for a single ring sensor is 9.5 m Ω / Oe , and its value monotonously increased to 102.6 m Ω / Oe for 17 rings with an enhanced active area.
Keywords
A. Thin film , D. Electronic transport , A. Magnetic films and multilayers
Journal title
Solid State Communications
Serial Year
2011
Journal title
Solid State Communications
Record number
1792577
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